Semiconductor Engineering

Simulations of Silicon Spin Qubits Based on a GAAFET (Teikyo U., Riken)

A new technical paper, “Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor,” was ...
Nasdaq

Applied Materials Technologies Enable 2D Scaling with EUV and 3D Gate-All-Around Transistors

SANTA CLARA, Calif., April 21, 2022 (GLOBE NEWSWIRE) -- Applied Materials, Inc. today introduced innovations that help customers continue 2D scaling with EUV and detailed the industry’s broadest ...
Semiconductor Engineering

Improving Gate All Around Transistor Performance Using Virtual Process Window Exploration

As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...
Electronic Design

Keeping Pace with AI: Why Gate-All-Around Transistors are the Answer

Artificial intelligence (AI) has become the workload that defines today’s semiconductor scaling. Whether in hyperscale data centers training foundation models or at the network edge executing ...
Electronic Design

Surrounding Gate Transistors May Improve DRAM

DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...

Graphene sensors stay stable in liquids, boosting sensitivity up to 20 times

Accurately measuring small shifts in biological markers, like proteins and neurotransmitters, or harmful chemicals in the water supply, can identify critical problems before they have a chance to ...
Ars Technica

A transistor made using two atomically thin materials sets size record

The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...